Oxidation study of GaN using x-ray photoemission spectroscopy
- 25 October 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (17) , 2602-2604
- https://doi.org/10.1063/1.125091
Abstract
The oxidation of GaN at room temperature was investigated using x-ray photoemission spectroscopy. The onset of oxidation is observed at 105 Langmuir (L=10−6 Torr s) of oxygen exposure. This is seen both in changes in the percent composition of oxygen and in shifts in the core spectrum of Gallium. The oxidation saturates at an exposure of 108 L. Detailed core level analysis shows that at this exposure most of the surface Ga atoms have been oxidized. The results indicate that the oxidation of GaN is a kinetically limited process restricted to the surface and the underlying bulk is not strongly perturbed. This is in sharp contrast with GaAs where oxidation begins at the same level of exposure and then continues for all further exposures as subsurface layers are oxidized.Keywords
This publication has 18 references indexed in Scilit:
- Piezoelectric charge densities in AlGaN/GaN HFETsElectronics Letters, 1997
- X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitrideApplied Physics Letters, 1997
- Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n -type GaNApplied Physics Letters, 1997
- Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaNApplied Physics Letters, 1996
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequencyElectronics Letters, 1996
- Low resistance ohmic contacts on wide band-gap GaNApplied Physics Letters, 1994
- High electron mobility transistor based on a GaN-AlxGa1−xN heterojunctionApplied Physics Letters, 1993
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991