High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
- 1 June 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (6A) , L417
- https://doi.org/10.1143/jjap.23.l417
Abstract
The effect of high-dose-rate, 16 keV focused-ion-beam (FIB) B+ implantation into Si has been investigated as a function of current density and beam-scan speed. It is shown by µ-RHEED (micro-probe reflection high-energy electron diffraction) observation that the increase in electrical activation of implanted B atoms at such low temperature annealing as 600°C closely correlated with the increase in amorphous zones produced. It is also found that continuous amorphous layer formation occurs with a 1–2×1015 ions/cm2 (one order lower than for conventional implantation) when both implantation conditions of high current density and slow scan speed (e.g. 20 mA/cm2 and 6×10-3 cm/s) are satisfied. The reason for amorphous zone formation enhancement by FIB implantation is discussed.Keywords
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