Reproducible integration of multijunction cascade cell components
- 1 June 1987
- journal article
- Published by Elsevier in Solar Cells
- Vol. 21 (1-4) , 253-261
- https://doi.org/10.1016/0379-6787(87)90125-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- 21% (one sun, air mass zero) 4 cm2 GaAs space solar cellsApplied Physics Letters, 1986
- Two-junction cascade solar cell incorporating a high-conductance MOCVD-grown interconnecting junctionElectronics Letters, 1985
- Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar-cell devicesJournal of Applied Physics, 1985
- The crystallographic connection of MOCVD-grown monolithic cascade subcells via transparent graded layersJournal of Crystal Growth, 1984
- The growth of Magnesium-doped GaAs by the Om-Vpe processJournal of Electronic Materials, 1983
- High-efficiency organometallic vapor phase epitaxy AlGaAs/GaAs monolithic cascade solar cell using metal interconnectsApplied Physics Letters, 1982
- The effect of elastic strain on energy band gap and lattice parameter in III-V compoundsJournal of Applied Physics, 1978
- The application of heterojunction structures to optical devicesJournal of Electronic Materials, 1975
- Asymmetric Cracking in III–V CompoundsJournal of the Electrochemical Society, 1974
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969