Thermally stimulated currents in epitaxially grown selenium monocrystalline films
- 15 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (4) , 295-297
- https://doi.org/10.1063/1.89675
Abstract
Thermally stimulated currents have been measured at liquid‐nitrogen temperature in structures containing a monocrystalline selenium thin film in the (0001) orientation. The results indicate a total trap density of the order of 1020 cm−3. Decayed TSC results suggest trapping energies over a range of values up to 0.16 eV.Keywords
This publication has 9 references indexed in Scilit:
- Selenium films epitaxially grown on tellurium substratesJournal of Electronic Materials, 1976
- High-Field Isothermal Currents and Thermally Stimulated Currents in Insulators Having Discrete Trapping LevelsPhysical Review B, 1972
- Electrical conduction in single crystal trigonal seleniumJournal of Physics C: Solid State Physics, 1971
- Thermally stimulated currents in trigonal seleniumPhysics Letters A, 1968
- SINGLE-CRYSTAL SELENIUM FILMSApplied Physics Letters, 1967
- Theory of Thermally Stimulated Conductivity in a Previously Photoexcited CrystalPhysical Review B, 1967
- Über den elektrischen Leitungsmechanismus von hexagonalen Selen‐EinkristallenPhysica Status Solidi (b), 1964
- Thermal Release of Trapped Space Charge in SolidsProceedings of the Physical Society, 1963
- The Electron Trap Mechanism of Luminescence in Sulphide and Silicate PhosphorsProceedings of the Physical Society, 1948