Bound state cyclotron resonance in modulation doped GaAs-AlxGa1−xAs quantum wells

This publication has 9 references indexed in Scilit:

• Anomalies in the cyclotron resonance in high-mobility GaAs-${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As heterojunctions
  Physical Review B, 1989
• Cyclotron resonance in donor and acceptor δ-doped ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As/GaAs heterostructures
  Physical Review B, 1989
• Magnetotransport and cyclotron resonance investigations of the 2D electron gas in e−-beam irradiated AlGaAs/GaAs heterojunctions
  Surface Science, 1988
• The effect of strong localization on the mobility of electrons in modulation-doped inverted structures
  Journal of Vacuum Science & Technology B, 1988
• Cyclotron resonance inAlxGa1−xAs-GaAs heterostructures with tunable charge density via front gates
  Physical Review B, 1987
• Cyclotron-resonance oscillations in InAs quantum wells
  Physical Review B, 1986
• Observation of oscillatory linewidth in the cyclotron resonance of GaAsAlxGa1−xAs heterostructures
  Solid State Communications, 1983
• Evidence for a Collective Ground State in Si Inversion Layers in the Extreme Quantum Limit
  Physical Review Letters, 1980
• Cyclotron Resonance of Localized Electrons on a Si Surface
  Physical Review Letters, 1975