Scaling of small-signal equivalent circuit elements for GaInP/GaAs hole-barrier bipolar transistors (HBBT)
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (1) , 222-224
- https://doi.org/10.1109/16.249454
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- High speed non-selfaligned GaInP/GaAs-TEBTElectronics Letters, 1992
- A 30 GHz bandwidth AlGaAs-GaAs HBT direct-coupled feedback amplifierIEEE Microwave and Guided Wave Letters, 1991
- A three-step method for the de-embedding of high-frequency S-parameter measurementsIEEE Transactions on Electron Devices, 1991
- Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressureApplied Physics Letters, 1991
- 33-GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifierIEEE Journal of Solid-State Circuits, 1991