Acceptor boron in α-SiC (6H): Investigation by the photocapacitance method
- 16 June 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 65 (2) , 709-716
- https://doi.org/10.1002/pssa.2210650238
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974
- Luminescence Efficiency of Silicon Carbide Doped with Boron and NitrogenJournal of the Electrochemical Society, 1967
- Electron Spin Resonance Studies in SiCPhysical Review B, 1961