A wide-bandwidth Si/SiGe HBT direct conversion sub-harmonic mixer/downconverter
- 1 September 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 35 (9) , 1329-1337
- https://doi.org/10.1109/4.868044
Abstract
A wideband sub-harmonic mixer/direct-conversion downconverter is implemented in a Si/SiGe HBT technology, with improved rejection of the local oscillator (LO), high input intercept point, and low current requirements. The circuit utilizes a combination of phase shifters operating at 45/spl deg/ and 90/spl deg/ to achieve better than 33-dB input-referred rejection of the LO. The measured third-order input intercept point (IIP3) was approximately -3 dBm and the second-order input intercept point (IIP2) was roughly 35 dBm, with a measured double sideband (DSB) noise figure of 7.8 dB. A comparison was made between devices of differing germanium concentration in the base, and the devices with higher Ge content exhibited improved noise figure and gain. Each mixer required approximately 2.8 mA from a 3.3 V supply.Keywords
This publication has 11 references indexed in Scilit:
- Merits and requirements of a few RF architecturesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 40 GHz band monolithic even harmonic mixer with an antiparallel diode pairPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A baseband integrated circuit for homodyne cordless phonesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 1 GHz image-rejection down-converter in 0.8 μm CMOS technologyIEEE Transactions on Consumer Electronics, 1998
- The multi-tanh principle: a tutorial overviewIEEE Journal of Solid-State Circuits, 1998
- An I/Q active balanced harmonic mixer with IM2 cancelers and a 45° phase shifterIEEE Journal of Solid-State Circuits, 1998
- Si/SiGe epitaxial-base transistors. II. Process integration and analog applicationsIEEE Transactions on Electron Devices, 1995
- A 1.9 GHz low-voltage silicon bipolar receiver front-end for wireless personal communications systemsIEEE Journal of Solid-State Circuits, 1995
- Direct-conversion radio transceivers for digital communicationsIEEE Journal of Solid-State Circuits, 1995
- A three-level broad-banded monolithic analog multiplierIEEE Journal of Solid-State Circuits, 1981