General transport theory of noise in p-n junction-like devices. IV. Terminal noise of p+-n diodes at high injection

This publication has 8 references indexed in Scilit:

• General transport theory of noise in p–n junction-like devices. III. Junction noise in p+–n diodes at high injection
  Physica Status Solidi (a), 1972
• Boundary conditions at p-n junctions
  Solid-State Electronics, 1971
• Noise sources in transport equations associated with ambipolar diffusion and Shockley-Read recombination
  Solid-State Electronics, 1970
• G-R noise and admittance of double injection diodes
  Physica, 1970
• Hole-electron product of pn junctions
  Solid-State Electronics, 1967
• Static V-I relationships in transistors at high injection levels
  IEEE Transactions on Electron Devices, 1966
• High injection theories of the p−n junction in the charge neutrality approximation
  Solid-State Electronics, 1966
• Shot and Thermal Noise in Germanium and Silicon Transistors at High-Level Current Injections
  Proceedings of the IRE, 1960