G-R noise and admittance of double injection diodes
- 2 March 1970
- Vol. 46 (2) , 291-302
- https://doi.org/10.1016/0031-8914(70)90229-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Noise and Equivalent Circuit of Double InjectionJournal of Applied Physics, 1968
- DOUBLE INJECTION AND HIGH FREQUENCY NOISE IN GERMANIUM DIODESApplied Physics Letters, 1967
- Space charge and oscillation effects in gold-doped silicon p-‘i’-n diodesSolid-State Electronics, 1967
- Dependence of double injection currents on both voltage and sample thickness in p-type siliconSolid State Communications, 1967
- NOISE IN DOUBLE-INJECTION SPACE-CHARGE-LIMITED DIODESApplied Physics Letters, 1967
- NOISE SUPPRESSION IN A DOUBLE-INJECTION SILICON DIODEApplied Physics Letters, 1966
- Transient Response of Double Injection in a Semiconductor of Finite Cross SectionJournal of Applied Physics, 1966
- Volume-controlled current injection in insulatorsReports on Progress in Physics, 1964
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961
- Current-Voltage Characteristics of Forward Biased LongStructuresPhysical Review B, 1961