Diffusion into silicon from an arsenic-doped oxide
- 30 June 1967
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (6) , 623-624
- https://doi.org/10.1016/0038-1101(67)90145-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- A Diffusion Mask for GermaniumJournal of the Electrochemical Society, 1961