Influence of carrier energy quantization on threshold voltage of metal-oxide-semiconductor transistor
- 15 May 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (10) , 5186-5190
- https://doi.org/10.1063/1.355766
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETsIEEE Transactions on Electron Devices, 1992
- A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layersSolid-State Electronics, 1991
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972