Ion Implant Activation and Redistribution in AlxGa1–xAs
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Si-ion implantation in GaAs and AlxGa1−xAsJournal of Applied Physics, 1988
- Be-ion implantation in AlxGa1−x AsJournal of Applied Physics, 1986
- Photoluminescence of shallow acceptors in Al0.28Ga0.72AsJournal of Applied Physics, 1983
- Free-to-bound transitions in Si-doped epitaxial Ga1−xAlxAsJournal of Applied Physics, 1981