Picosecond gain measurements in a GaAlAs diode laser
- 1 September 1984
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 9 (9) , 396-398
- https://doi.org/10.1364/ol.9.000396
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 7 references indexed in Scilit:
- Gain mechanism in an (AlGa)As double heterostructure laserIEEE Journal of Quantum Electronics, 1983
- High-frequency characteristics of GaAlAs injection lasersIEEE Journal of Quantum Electronics, 1982
- Luminescence decay and injected carrier lifetime in the high injection region of AlGaAs lasersIEEE Journal of Quantum Electronics, 1982
- Picosecond measurement of spontaneous and stimulated emission from injection lasersApplied Physics Letters, 1982
- Transverse-modal behavior of a transverse junction stripe laser excited by a short electrical pulseJournal of Applied Physics, 1981
- Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasersJournal of Applied Physics, 1980
- Interfacial recombination velocity in GaAlAs/GaAs heterostructuresApplied Physics Letters, 1978