High-frequency characteristics of GaAlAs injection lasers
- 1 October 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 18 (10) , 1718-1727
- https://doi.org/10.1109/jqe.1982.1071403
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Magnitude of the intrinsic resonant frequency in a semiconductor laserApplied Physics Letters, 1981
- Highly efficient (GaAl)As buried-heterostructure lasers with buried optical guideApplied Physics Letters, 1979
- Calculated spontaneous emission factor for double-heterostructure injection lasers with gain-induced waveguidingIEEE Journal of Quantum Electronics, 1979
- III-V alloy heterostructure high speed avalanche photodiodesIEEE Journal of Quantum Electronics, 1979
- Transverse mode stabilized AlxGa1-xAs injection lasers with channeled-substrate-planar structureIEEE Journal of Quantum Electronics, 1978
- Measurement of spontaneous-emission factor of AlGaAs double-heterostructure semiconductor lasersIEEE Journal of Quantum Electronics, 1977
- GaAs–Ga1−xAlxAs buried-heterostructure injection lasersJournal of Applied Physics, 1974
- Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold currentJournal of Applied Physics, 1974
- Direct modulation of semiconductor lasersProceedings of the IEEE, 1970
- Resonance-like characteristics of the direct modulation of a junction laserProceedings of the IEEE, 1967