Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold current
- 1 June 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (6) , 2785-2786
- https://doi.org/10.1063/1.1663670
Abstract
A new geometry DH laser is developed in which a very thin GaAs homojunction laser is sandwiched by (GaAl)As layers. The minimum threshold current is 63 and 80 mA for pulsed and cw operation at room temperature, respectively. The possibility of further reduction of threshold current is briefly mentioned.This publication has 4 references indexed in Scilit:
- A new geometry double-heterostructure injection laser for room-temperature continuous operation: junction-stripe-geometry DH lasersJournal of Applied Physics, 1973
- Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operationProceedings of the IEEE, 1972
- Very-Low-Current Operation of Mesa-Stripe-Geometry Double-Heterostructure Injection LasersApplied Physics Letters, 1972
- Threshold current density in solution-grown GaAs laser diodesIEEE Journal of Quantum Electronics, 1967