Investigation of the properties of organometallic vapor phase epitaxially grown AlGaAs/GaAs heterostructures using Raman scattering

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Abstract
The growth of AlGaAs/GaAs heterostructures by low pressure organometallic vapor phase epitaxy was studied using Raman spectroscopy on a series of multilayer structures. Growth conditions were chosen to allow the investigation of the effects of growth rate and growth interruption during the formation of each type of interface (aluminum ‘‘turn on’’ and ‘‘turn off’’). This study represents the first report on the use of Raman for the quantitative measurement of the alloy composition in each region of a superlattice structure, where the observation is made that an extended growth interruption is required for the growth of thin GaAs regions (less than 100 Å) over AlGaAs (Al ‘‘turn off’’) while the other interface requires no growth interruption.