Recent developments and progress on electrical contacts to CdTe, CdS and ZnSe with special reference to BARRIER contacts to CdTe
- 1 January 1998
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization of Materials
- Vol. 36 (4) , 249-290
- https://doi.org/10.1016/s0960-8974(98)00010-2
Abstract
No abstract availableKeywords
This publication has 44 references indexed in Scilit:
- Metal/n-CdTe interfaces: A study of electrical contacts by deep level transient spectroscopy and ballistic electron emission microscopySolid-State Electronics, 1998
- Schottky barrier formation at metal/n-ZnSe interfaces and characterization of Au/n-ZnSe by ballistic electron emission microscopyJournal of Applied Physics, 1997
- Effects of multi-level fermi pinning and aggregate surface area on Schottky barrier heights at metal/semiconductor interfacesInternational Journal of Electronics, 1996
- Discrete schottky barriers observed for the metaln-ZnSe(100) systemJournal of Crystal Growth, 1996
- Au/n-ZnSe contacts studied with use of ballistic-electron-emission microscopyPhysical Review B, 1995
- Electronic and microstructural properties of disorder-induced gap states at compound semiconductor–insulator interfacesJournal of Vacuum Science & Technology B, 1987
- Schottky barriers: An effective work function modelApplied Physics Letters, 1981
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Zur Halbleitertheorie der Sperrschicht- und SpitzengleichrichterThe European Physical Journal A, 1939