Photocurrent doubling at Si(111): analysis of the surface condition
- 1 September 1989
- journal article
- research article
- Published by Elsevier in Electrochimica Acta
- Vol. 34 (9) , 1379-1380
- https://doi.org/10.1016/0013-4686(89)85036-4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy resultsJournal of Applied Physics, 1986
- Anodic properties of n-Si and n-Ge electrodes in HF solution under illumination and in the darkJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1983
- Photoanodic properties of an n-type silicon electrode in aqueous solutions containing fluoridesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1983
- Über den Anteil der Defektelektronen an der anodischen Auflösung von GermaniumZeitschrift für Physikalische Chemie, 1960
- Experiments on the Interface between Germanium and an ElectrolyteBell System Technical Journal, 1955