Growth of Hg1−xZnxTe by molecular beam epitaxy on a GaAs(100) substrate
- 15 December 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (12) , 1291-1293
- https://doi.org/10.1063/1.96308
Abstract
We report for the first time the growth and characterization of n‐type and p‐type Hg1−xZnxTe layers grown by molecular beam epitaxy on GaAs (100) substrates. The HgZnTe grown over either (111)CdTe‖‖(100)GaAs or (100)CdTe‖‖(100)GaAs buffer layers preserved the orientation of the buffer. Electron diffraction and electrical characterization demonstrate the HgZnTe layers to be comparable to high quality HgCdTe of the same cut‐off frequency. Since the layers exhibit cut‐off wavelengths in far and mid‐infrared range and are of high quality, they appear to be candidates for infrared devices.Keywords
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