Mercury zinc telluride, a new narrow-gap semiconductor
- 1 January 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1) , 59-61
- https://doi.org/10.1063/1.95851
Abstract
For the first time the growth of single crystal solid solutions of Hg1−xZnxTe is demonstrated. Layers with compositions of x=0.16 and 0.23 having transmission cut-on wavelengths of 9.1 and 4.1 μm at 80 K, respectively, were grown by liquid phase epitaxy on CdTe substrates. The optical and electrical characteristics of the epilayers are similar to those obtained for Hg1−xCdxTe alloys.Keywords
This publication has 3 references indexed in Scilit:
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- Electrical properties of as-grown Hg1−xCdxTe epitaxial layersJournal of Applied Physics, 1980
- Electrical and far-infrared optical properties of p-type Hg1−xCdxTeJournal of Applied Physics, 1976