Free excitons with n=2 in bulk GaN
- 18 August 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (7) , 948-949
- https://doi.org/10.1063/1.119697
Abstract
The direct observation of free A, B, and C excitons with n=2 in hexagonal bulk gallium nitride (GaN) by two-photon spectroscopy is reported. From these data, the band gaps, exciton binding energies, and hole masses for the three uppermost valence bands are calculated.Keywords
This publication has 17 references indexed in Scilit:
- Preparation of GaN Single Crystals Using a Na FluxChemistry of Materials, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodesApplied Physics Letters, 1996
- Exciton region reflectance of homoepitaxial GaN layersApplied Physics Letters, 1996
- Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substratesSolid State Communications, 1996
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga1-xInxN Calculated by the Tight-Binding MethodJapanese Journal of Applied Physics, 1995
- Determination of the Conduction Band Electron Effective Mass in Hexagonal GaNJapanese Journal of Applied Physics, 1995
- First-Principles Calculation of Effective Mass Parameters of Gallium NitrideJapanese Journal of Applied Physics, 1995
- Band gaps, crystal-field splitting, spin-orbit coupling, and exciton binding energies in ZnO under hydrostatic pressureSolid State Communications, 1995
- Infrared Lattice Vibrations and Free-Electron Dispersion in GaNPhysical Review B, 1973
- Stimulated Emission and Laser Action in Gallium NitrideApplied Physics Letters, 1971