Annealing characteristics of boron- and phosphorus-implanted polycrystalline silicon
- 1 December 1976
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (12) , 5167-5170
- https://doi.org/10.1063/1.322588
Abstract
Polycrystalline silicon films implanted with 1×1012 to 7.8×1015/cm2 doses of boron and phosphorus were isochronally annealed up to 1100 °C. Annealing below 600 °C removes the radiation damage created by the implantation process. For doses higher than 1×1014/cm2 an abrupt decrease in sheet resistance takes place between 650 and 700 °C. Hall measurements show that this decrease is the result of a large increase in both the carrier concentration and mobility. Electron‐reflection diffraction patterns show that recrystallization takes place within this temperature range. Annealing above 700 °C only causes a small further decrease in the sheet resistance.This publication has 7 references indexed in Scilit:
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