Charge-coupled device with buried channels under electrode gaps

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Abstract
A new kind of charge‐coupled device with buried channels is described. This device is fabricated by forming ion‐implanted buried channels under the gaps between electrodes. Since the device does not depend on the surface potential under the gaps, a reliable and low‐operating‐voltage device with nonoverlapping gate electrodes can be made. Transfer efficiency greater than 99.5% per transfer has been obtained at 500 kHz.

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