X-Ray Fluorescence Analysis of Hg in SiO2 Films Deposited by Hg-Sensitized Photo-CVD
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9R)
- https://doi.org/10.1143/jjap.25.1449
Abstract
SiO2 films produced by Hg-sensitized photo-CVD were examined using X-ray fluorescence analysis with synchrotron radiation under a grazing incident condition. In all the SiO2 films studied Hg was detected. The concentrations were in the range 60 to 190 ppm. From the glancing-angle dependence of the HgLα intensity, it was concluded that Hg was not localized at the film surface, but was distributed throughout.Keywords
This publication has 7 references indexed in Scilit:
- Grazing incidence X-ray fluorescence analysisNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986
- Synchrotron radiation excited x-ray fluorescence analysis using total reflection of x-raysAnalytical Chemistry, 1986
- Energy dispersive X-ray fluorescence analysis with synchrotron radiationNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1985
- Photo‐CVD for VLSI IsolationJournal of the Electrochemical Society, 1984
- Total Reflectance X-Ray SpectrometryAdvances in X-ray Analysis, 1984
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of DisilaneJapanese Journal of Applied Physics, 1983
- Optical Flats for Use in X-Ray Spectrochemical MicroanalysisReview of Scientific Instruments, 1971