GaAs/AlGaAs Lensed Light Emitting Diode by the Meltback and Regrowth in Liquid Phase Epitaxy
- 1 May 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (5B) , L910
- https://doi.org/10.1143/jjap.30.l910
Abstract
AlGaAs micro-lens was fabricated for light emitting diode (LED) applications using the liquid phase epitaxy (LPE) meltback technique. The lenses can be used to enhance the optical power of AlGaAs/GaAs LED's. The meltback technique using the LPE provides simple fabrication procedures which is not easily achieved in the conventional lensed structure.Keywords
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