Nonlinear change of refractive index of Co3O4 thin films induced by semiconductor laser (λ=405 nm) irradiation
- 5 August 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (6) , 999-1001
- https://doi.org/10.1063/1.1498144
Abstract
Nonlinear change of the refractive index (n) and extinction coefficient (k) of thin films induced by a laser with irradiation was evaluated using equipment having an ellipsometric optical configuration. Nonlinear refractive index and extinction coefficient were (positive) and (negative), respectively. and at were and (both have negative signs). From these results and the fact that the thin film has the band-gap energy of 2.06 eV, the band filling effect can be seen as one of the most probable models describing the large nonlinear change of n and k of thin film.
Keywords
This publication has 8 references indexed in Scilit:
- Nano structure analysis of sputtered thin films consisting of cobalt oxide and soda-lime glass compositeThin Solid Films, 2002
- A New Super-Resolution Film Applicable to Read-Only and Rewritable Optical DisksJapanese Journal of Applied Physics, 1999
- Preparation and characterization of spray pyrolysed cobalt oxide thin filmsThin Solid Films, 1996
- Large third-order optical nonlinearities in transition-metal oxidesNature, 1995
- Free-carrier-induced third-order optical nonlinearities in semiconductorsJournal of the Optical Society of America B, 1989
- An assigment of the optical absorption spectrum of mixed valence Co3O4 spinel filmsJournal of Physics and Chemistry of Solids, 1987
- The optical properties of sputtered Co3O4 filmsThin Solid Films, 1986
- Band-Gap—Resonant Nonlinear Refraction in III-V SemiconductorsPhysical Review Letters, 1981