Electron paramagnetic resonance studies of Si-SiO2interface defects
- 1 December 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (12) , 970-979
- https://doi.org/10.1088/0268-1242/4/12/002
Abstract
This paper contains a review of electron paramagnetic resonance studies on Pb-type centres at the Si-SiO2 interface. It includes a synopsis of studies on the atomic structure of Pb defects and the chemical kinetics whereby Pb centres are passivated with H2.Keywords
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