ELECTROLUMINESCENCE NEAR BAND GAP IN GALLIUM PHOSPHIDE CONTAINING SHALLOW DONOR AND ACCEPTOR LEVELS
- 1 August 1965
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 7 (3) , 65-67
- https://doi.org/10.1063/1.1754302
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- RADIATIVE RECOMBINATION IN GaP p-n AND TUNNEL JUNCTIONSApplied Physics Letters, 1965
- Injection Mechanisms in GaAs Diffused Electroluminescent JunctionsPhysical Review B, 1965
- New Pair Spectra in Gallium PhosphidePhysical Review B, 1965
- Electroluminescent recombination near the energy gap in GaP diodesSolid-State Electronics, 1964
- Electron-Hole and Electron-Impurity Band Tunneling in GaAs Luminescent JunctionsPhysical Review Letters, 1963
- Tunneling-Assisted Photon Emission in Gallium ArsenideJunctionsPhysical Review Letters, 1962