Reverse sequence of formation of titanium nitrides by nitrogen implantation
- 15 May 1988
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (10) , 4942-4945
- https://doi.org/10.1063/1.340437
Abstract
Room‐temperature implantation was conducted for the thin titanium films by 80‐keV nitrogen ions. It was found that TiN began to appear at a dose around 2×1017 N/cm2, and the titanium film converted entirely into TiN after 1×1018 N/cm2 implantation. Surprisingly, Ti2N, which has a lower N/Ti ratio than TiN, was only detected at an even higher implantation dose, e.g., as high as 2×1018 N/cm2. This reverse sequence of titanium nitride formation was attributed to the structural compatibility between the matrix and new phase being formed. Viewed in this light, a shearing mechanism is proposed, which can explain the titanium nitride formation, and is also applicable to other metal nitrogen systems.This publication has 7 references indexed in Scilit:
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