The l–h junction as an element of the semiconductor device

This publication has 8 references indexed in Scilit:

• Influence of Surface Recombination-Generation in the Depletion Layer on the I-U Characteristic of a p-n Junction
  Physica Status Solidi (a), 1982
• Minority carrier reflecting properties of semiconductor high-low junctions
  Solid-State Electronics, 1975
• A new approach towards the current–voltage characteristics of the l–h junction
  Physica Status Solidi (a), 1973
• Some properties of alloyed-junction (p-n)-(l-h) germanium diodes
  Solid-State Electronics, 1964
• Carrier Accumulation in Germanium
  Proceedings of the Physical Society. Section B, 1956
• Carrier Concentration Disturbances in Semiconductors
  Proceedings of the Physical Society. Section B, 1955
• Carrier Extraction in Germanium
  Proceedings of the Physical Society. Section B, 1955
• The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
  Bell System Technical Journal, 1949