Diode multipliers for submillimeter‐wave InAlAs/InGaAs heterostructure monolithic integrated circuits
- 5 January 1991
- journal article
- research article
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 4 (1) , 38-43
- https://doi.org/10.1002/mop.4650040112
Abstract
InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter‐wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+bottom layer and a new proposed scheme of quantum‐confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.Keywords
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