W-band monolithic oscillator using InAlAs/InGaAs HEMT
- 30 August 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (18) , 1425-1426
- https://doi.org/10.1049/el:19900914
Abstract
A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was − 7dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.Keywords
This publication has 1 reference indexed in Scilit:
- A 115 GHz Monolithic GaAs FET OscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985