Absorption inp-type Si-SiGe strained quantum-well structures

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Abstract
We present full-scale relativistic pseudopotential calculations of the first-order susceptibility in p-type Si-SiGe structures with a view of exploring the suitability of such systems for infrared (10–15 and 3–5 μm wavelengths) applications. The frequency dependence of the linear response due to transitions between valence minibands is calculated and the microscopic origin of the peaks determined. We also explore the effect of temperature on various structures. We show that simple particle-in-a-box models are unable to correctly describe the observed peak positions or the mechanisms involved. In particular, many important contributions come from areas of the Brillouin zone away from the zone center. We aim to show that normal incidence absorption is possible using SiGe structures.