Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se2 occurring during growth
- 1 November 2003
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 94 (9) , 5584-5591
- https://doi.org/10.1063/1.1613804
Abstract
The changes in dominant recombination mechanisms of Cu(In,Ga)Se2 thin films grown from (In,Ga)2Se3 precursors are investigated using energy- and time-resolved photoluminescence. The results are analyzed with a rate-equation analysis and correlated with n/p diode measurements on processed devices. The experimental results quantify a change in the dominant radiative process and an improvement in the underlying material quality. These observations support a growth model incorporating changes in the dominant defect states and recombination mechanisms during this final stage of the growth process. Additionally, evidence is presented that supports the passivation of near-surface recombination sites by CdS.This publication has 12 references indexed in Scilit:
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