3D simulation of deep-submicron devices. How impurity atoms affect conductance
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Computational Science and Engineering
- Vol. 2 (2) , 30-37
- https://doi.org/10.1109/99.388952
Abstract
As electronic devices are scaled down to the 0.1-micron range and below, the location of individual impurity atoms begins to affect whether the gates that control current flow open and close properly. This 3D simulation hints at how the basic structure of matter might limit device size.<>Keywords
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