Arsenic passivation of Si and Ge surfaces
- 1 January 1992
- journal article
- research article
- Published by Taylor & Francis in Critical Reviews in Solid State and Materials Sciences
- Vol. 17 (4) , 353-395
- https://doi.org/10.1080/10408439208242194
Abstract
This article reviews the passivating effect of arsenic monolayers on various silicon and germanium surfaces. It has been shown that such monolayers dramatically reduce the reactivity of the initial surfaces. The atomic structure and the nature of the bonding between the As layer and the various Si and Ge surfaces are described and the reasons for the passivation effects are discussed. Results of experimental and theoretical investigations of As-terminated Si and Ge surfaces are reviewed and compared with the same surfaces terminated with other atomic layers. Finally, the effect of As-termination on interface formation and heteroepitaxy is considered. In particular, the initial stage of GaAs growth on Si, which is dominated by the As-passivation of the Si substrate, is discussed.Keywords
This publication has 90 references indexed in Scilit:
- Atomic structure of the arsenic-saturated Si(111) surfacePhysical Review B, 1988
- Structural perfection of the Si(111)-(1×1) As surfacePhysical Review B, 1988
- Geometric structure of the Si(111): As-1 × 1 surfacePhysical Review B, 1988
- Geometric and Local Electronic Structure of Si(111)-AsPhysical Review Letters, 1988
- Arsenic atom location on passivated silicon (111) surfacesPhysical Review B, 1987
- Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surfacePhysical Review B, 1987
- Arsenic overlayer on Si(111): Removal of surface reconstructionPhysical Review B, 1986
- Surface and bulk electronic structure of Ge(111)c(2×8) and Ge(111):As 1×1Physical Review B, 1986
- Surface band dispersion of Ge(111)c(2×8) and Ge(111):As 1×1Journal of Vacuum Science & Technology A, 1986
- Arsenic-terminated Ge(111): An ideal 1×1 surfacePhysical Review Letters, 1985