Analysis and optimization of accumulation-mode varactor for RF ICs
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- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper presents a novel RF IC varactorimplemented in standard CMOS process. This device hasshown a remarkable tuning range of 150#, sensitivity of300##V, and quality factor of 23 at 1 GHz. A physicalmodel of the varactor is presented and con#rmed withmeasured data. Using the model derived, optimization hasshown that a Q as high as 200 can be achieved.I. IntroductionHigh quality on-chip varactors are essential to monolithicintegration of voltage-controlled oscillators in a...Keywords
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