Submilliamp 1.3 µm vertical-cavity surface-emittinglasers with threshold current density of < 500 A/cm 2
- 5 June 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (12) , 1052-1054
- https://doi.org/10.1049/el:19970679
Abstract
High performance 1.3 µm vertical-cavity surface-emitting lasers (VCSELs) using oxygen implantation in wafer-bonded GaAs/AlGaAs mirrors are demonstrated. A record low threshold current density of 454 A/cm2 and a threshold current of 0.83 mA have been achieved for pulsed operation at 20°C. The maximum CW and pulsed operating temperatures are 40 and 112°C, respectively.Keywords
This publication has 3 references indexed in Scilit:
- 1.3-μm Vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrorsIEEE Photonics Technology Letters, 1997
- Submilliamp long wavelength vertical cavity lasersElectronics Letters, 1996
- Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasersIEEE Photonics Technology Letters, 1995