Selectively doped double-heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser
- 9 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (15) , 1391-1393
- https://doi.org/10.1063/1.102477
Abstract
A new type of laser structure which utilizes the selectively doped double-heterojunction (SDH) structure for lateral current injection (LCI) was proposed. A ridge waveguide AlGaAs/GaAs laser based on the SDH-LCI scheme was demonstrated to lase at the very low threshold current of 11.5 mA. The compatibility of this new laser structure with electronic devices is discussed.Keywords
This publication has 10 references indexed in Scilit:
- CW Operation and Extremely Low Capacitance of TJ-BH MQW Laser Diodes Fabricated by Entire MOVPEJapanese Journal of Applied Physics, 1988
- AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW) laser using impurity-induced disorderingIEEE Journal of Quantum Electronics, 1988
- Extremely wide modulation bandwidth in a low threshold current strained quantum well laserApplied Physics Letters, 1988
- Transverse junction buried heterostructure (TJ-BH) AlGaAs diode laserElectronics Letters, 1987
- Gain-switching characteristics and fast transient response of three-terminal size-effect modulation laserIEEE Journal of Quantum Electronics, 1986
- Recent progress in optoelectric integrated circuits (OEIC's)IEEE Journal of Quantum Electronics, 1986
- A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)Japanese Journal of Applied Physics, 1984
- Improved AlxGa1−xAs bulk lasers with superlattice interfacesApplied Physics Letters, 1984
- Transverse-modal behavior of a transverse junction stripe laser excited by a short electrical pulseJournal of Applied Physics, 1981
- High temperature single-mode cw operation with a junction-up TJS laserApplied Physics Letters, 1978