Dangling bond surface state of Si(111): New results
- 30 June 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (9) , 809-813
- https://doi.org/10.1016/0038-1098(81)90301-x
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Low-energy electron diffraction from Si(111)-2×1: theory and experimentJournal of Physics C: Solid State Physics, 1979
- Energy Bands of Reconstructed Surface States of Cleaved SiPhysical Review Letters, 1975
- Self-Consistent Pseudopotential Calculations on Si(111) Unreconstructed and (2×1) Reconstructed SurfacesPhysical Review Letters, 1975
- Measurement of the Angle of Dangling-Bond Photoemission from Cleaved SiliconPhysical Review Letters, 1974
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Surface States and Surface Bonds of Si(111)Physical Review Letters, 1973
- Observation of a Band of Silicon Surface States Containing One Electron Per Surface AtomPhysical Review Letters, 1972
- Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAsPhysical Review Letters, 1972
- Structural Properties of Cleaved Silicon and Germanium SurfacesJournal of Applied Physics, 1963
- Surface Structures and Properties of Diamond-Structure SemiconductorsPhysical Review B, 1961