High Quality GaN Layers Grown by Metalorganic Chemical Vapor Deposition on Si(111) Substrates
- 22 November 1999
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 176 (1) , 611-614
- https://doi.org/10.1002/(sici)1521-396x(199911)176:1<611::aid-pssa611>3.0.co;2-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Enhanced optical emission from GaN films grown on a silicon substrateApplied Physics Letters, 1999
- Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layerApplied Physics Letters, 1999
- Lateral epitaxial overgrowth of GaN films on sapphire and silicon substratesApplied Physics Letters, 1999
- Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layerMRS Internet Journal of Nitride Semiconductor Research, 1999
- Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layerApplied Physics Letters, 1998