On the growth of stacking faults and dislocations induced in silicon by phosphorus predeposition

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Abstract
The growth of extrinsic stacking faults associated with SiP platelets induced by phosphorus predeposition in thin silicon foils has been followed by transmission electron microscopy. The role of the precipitates and of the phosphorus diffusion on the climb of the Frank partials is discussed. Unfaulting reactions, observed to annihilate isolated extrinsic Frank loops, are assumed to take place also in the case of the stacking faults associated with precipitates, resulting in the generation of 60° perfect dislocations, which have been revealed by x‐ray topography. Different climb rates for the 60° dislocations have been observed after predeposition experiments performed by varying the oxidation and the phosphorus‐doping kinetics; the relationship between these two parameters and the vapor partial pressures of the gas flowing in the furnace has been obtained as a result of careful experimental work. From the results of all our experiments, it has been deduced that the ingoing phosphorus, rather than the associated oxidation, is the main factor responsible for the climb of both partial and unit dislocations. The growth of these defects is attributed to the interstitial supersaturation produced at the interface Si‐SiO2 by the phosphorus atoms entering the silicon lattice.