Theoretical analysis of dopant redistribution in silicon after implantation through an SiO2 mask
- 1 August 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (3) , 1511-1514
- https://doi.org/10.1063/1.357726
Abstract
The redistribution after annealing in silicon of dopant implanted through a silicon oxide mask is discussed. The conditions which are essential to analyze diffusion profiles by simple Gaussian function are presented. The finite thickness of the oxide mask is taken into consideration. Experimental data of implanted P are compared with the exact and approximated solutions and it is shown that the use of the Gaussian approximation is within of ∼12% accuracy of the exact solution.This publication has 7 references indexed in Scilit:
- Diffusion of P in a novel three-dimensional device based on Si–TaSi2 eutecticJournal of Applied Physics, 1993
- Ion Implantation in Oxides on SiliconDefect and Diffusion Forum, 1988
- Diffusion of group III and V elements in SiO2Applied Surface Science, 1987
- Exact description and data fitting of ion-implanted dopant profile evolution during annealingApplied Physics Letters, 1984
- Ion implantation for threshold control in COSMOS circuitsIEEE Transactions on Electron Devices, 1974
- Diffusion of gallium through a silicon dioxide layerJournal of Physics and Chemistry of Solids, 1964
- Effect of Oxide Layers on the Diffusion of Phosphorus into SiliconJournal of Applied Physics, 1960