Mobility of Electrons in a Quantized Accumulation Layer on ZnO Limited by Phonon Scattering
- 1 December 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 102 (2) , K125-K128
- https://doi.org/10.1002/pssb.2221020243
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Field-effect mobility in quantized accumulation layers on ZnO surfacesPhysical Review B, 1979
- Quantization effects in ZnO accumulation layers in contact with an electrolytePhysical Review B, 1979
- Hall mobility of electrons in quantized accumulation layers on ZnO surfacesPhysical Review B, 1979
- Two-dimensional electron-lattice scattering in thermally oxidized silicon surface-inversion layersPhysical Review B, 1974
- The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion LayerJournal of the Physics Society Japan, 1969
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967