Trends with alloying for deep impurities in Ga1−xAlxAs
- 31 October 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 40 (4) , 335-337
- https://doi.org/10.1016/0038-1098(81)90832-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Deep impurities in semiconductors. I. Evanescent states and complex band structureJournal of Physics C: Solid State Physics, 1980
- Band Structure and Pseudopotential Form Factors for AlAsPhysica Status Solidi (b), 1973
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965