A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry
- 24 July 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (8) , 1782-1788
- https://doi.org/10.1109/ted.2006.878018
Abstract
This paper simulates the expected device performance and scaling perspectives of carbon nanotube (CNT) field-effect transistors with doped source and drain extensions. The simulations are based on the self-consistent solution of the three-dimensional Poisson-Schroumldinger equation with open boundary conditions, within the nonequilibrium Green's function formalism, where arbitrary gate geometry and device architecture can be considered. The investigation of short channel effects for different gate configurations and geometry parameters shows that double-gate devices offer quasi-ideal subthreshold slope and drain-induced barrier lowering without extremely thin gate dielectrics. Exploration of devices with parallel CNTs shows that on currents per unit width can be significantly larger than the silicon counterpart, while high-frequency performance is very promisingKeywords
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This publication has 21 references indexed in Scilit:
- Code for the 3D Simulation of Nanoscale Semiconductor Devices, Including Drift-Diffusion and Ballistic Transport in 1D and 2D Subbands, and 3D TunnelingJournal of Computational Electronics, 2005
- Electrostatics of Partially Gated Carbon Nanotube FETsIEEE Transactions on Nanotechnology, 2004
- A Numerical Study of Scaling Issues for Schottky-Barrier Carbon Nanotube TransistorsIEEE Transactions on Electron Devices, 2004
- Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETsIEEE Transactions on Nanotechnology, 2003
- Ballistic carbon nanotube field-effect transistorsNature, 2003
- Lateral Scaling in Carbon-Nanotube Field-Effect TransistorsPhysical Review Letters, 2003
- Short-channel like effects in Schottky barrier carbon nanotube field-effect transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Carbon Nanotubes as Schottky Barrier TransistorsPhysical Review Letters, 2002
- Nanoscale device modeling: the Green’s function methodSuperlattices and Microstructures, 2000
- Helical microtubules of graphitic carbonNature, 1991