Improved Crystal Perfection in Zone-Recrystallized Si Films on Sio2
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Suppression of low angle grain boundaries in seeded thick Si films recrystallized between SiO2 layersApplied Physics Letters, 1983
- Solidification‐Front Modulation to Entrain Subboundaries in Zone‐Melting Recrystallization of Si on SiO2Journal of the Electrochemical Society, 1983
- Electron channeling patterns in the scanning electron microscopeJournal of Applied Physics, 1982
- Defect Etch for Silicon EvaluationJournal of the Electrochemical Society, 1979