Suppression of low angle grain boundaries in seeded thick Si films recrystallized between SiO2 layers
- 1 December 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (11) , 1048-1050
- https://doi.org/10.1063/1.94231
Abstract
We observe a marked suppression in the formation of low angle grain boundaries (sub‐boundaries) during the graphite strip heater recrystallization of thick Si films over buried islands of SiO2. For 27‐μm‐thick Si films, areas exceeding 1×1 mm2 have been recrystallized on SiO2 which are completely free of grain boundaries and sub‐boundaries, but which contain dislocations in other configurations. Moreover, we find the density of these remaining dislocations to be much reduced near the upper and lower SiO2 interfaces.Keywords
This publication has 6 references indexed in Scilit:
- Seeded recrystallization of thick polysilicon films on oxidized 3-in. wafersApplied Physics Letters, 1983
- Recrystallization of polysilicon films using incoherent lightMaterials Letters, 1982
- Arc lamp zone melting and recrystallization of Si films on oxidized silicon substratesApplied Physics Letters, 1982
- MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrateIEEE Electron Device Letters, 1981
- Defect Etch for Silicon EvaluationJournal of the Electrochemical Society, 1979
- cw laser anneal of polycrystalline silicon: Crystalline structure, electrical propertiesApplied Physics Letters, 1978