Effects of interface states on gas-sensing properties of a CuO/ZnO thin-film heterojunction
- 28 February 1994
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 17 (3) , 221-226
- https://doi.org/10.1016/0925-4005(93)00878-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Fabrication of thin-film CuO/ZnO heterojunction and its humidity-sensing propertiesSensors and Actuators B: Chemical, 1993
- Sensing properties of LnMO3/SnO2 (Ln = rare earth, M = Cr, Co, Mn, Fe) having a heterojunctionSensors and Actuators B: Chemical, 1992
- Oxidizing Gas Sensing by SiC/ZnO HeterocontactJournal of the Ceramic Society of Japan, 1991
- Interface states of Ag/(110)GaAs Schottky diodes without and with interfacial layersJournal of Applied Physics, 1988
- The interaction of Al, Mn, and Ag with clean and oxidized GaAs and InP(110) surfacesJournal of Vacuum Science & Technology B, 1986
- Single-Step Optical Lift-Off ProcessIBM Journal of Research and Development, 1980
- Dependence of Barrier Height of Metal Semiconductor Contact (Au–GaAs) on Thickness of Semiconductor Surface LayerJournal of Applied Physics, 1972
- The capacitance of p-n heterojunctions including the effects of interface statesIEEE Transactions on Electron Devices, 1967